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NGTD13T65F2WP Trench Field Stop 650V IGBT 650V 30A FS2 Die

NGTD13T65F2WP

Trench Field Stop 650V IGBT 650V 30A FS2 Die
Artikelnummer
NGTD13T65F2WP
Kategori
Transistor/MOS tube/transistor > IGBT tube/module
Tillverkare/varumärke
onsemi (Ansemi)
Inkapsling
SMD
Förpackning
bagged
Antal paket
1
Beskrivning
Utilizing a durable and cost-effective field-stop II trench structure, this insulated-gate bipolar transistor (IGBT) provides excellent performance in demanding switching applications and also offers low on-state voltage and lowest switching losses .
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Nyckelord av NGTD13T65F2WP
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