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TPN2R304PL,L1Q
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TPN2R304PL,L1Q

MOSFET N-CH 40V 80A TSON
Artikelnummer
TPN2R304PL,L1Q
Tillverkare/varumärke
Toshiba Semiconductor and Storage
Serier
U-MOSIX-H
Sektionsstatus
Active
Förpackning
Digi-Reel®
Teknologi
MOSFET (Metal Oxide)
Driftstemperatur
175°C
Monteringstyp
Surface Mount
Paket/fodral
8-PowerVDFN
Leverantörsenhetspaket
8-TSON Advance (3.3x3.3)
Effektförlust (max)
630mW (Ta), 104W (Tc)
FET typ
N-Channel
FET-funktioner
-
Dränera till spänningskälla (Vdss)
40V
Ström - Kontinuerlig dränering (Id) @ 25°C
80A (Tc)
Aktiva Rds (Max) @ Id, Vgs
2.3 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
2.4V @ 0.3mA
Portkostnad (Qg) (Max) @ Vgs
41nC @ 10V
Ingångskapacitans (Ciss) (Max) @ Vds
3600pF @ 20V
Drivspänning (Max Active Rds, Min Active Rds)
4.5V, 10V
Vgs (max)
±20V
Begäran om begäran
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