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TPN2R203NC,L1Q
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TPN2R203NC,L1Q

MOSFET N-CH 30V 45A 8-TSON
Artikelnummer
TPN2R203NC,L1Q
Tillverkare/varumärke
Toshiba Semiconductor and Storage
Serier
U-MOSVIII
Sektionsstatus
Active
Förpackning
Tape & Reel (TR)
Teknologi
MOSFET (Metal Oxide)
Driftstemperatur
150°C (TJ)
Monteringstyp
Surface Mount
Paket/fodral
8-PowerVDFN
Leverantörsenhetspaket
8-TSON Advance (3.3x3.3)
Effektförlust (max)
700mW (Ta), 42W (Tc)
FET typ
N-Channel
FET-funktioner
-
Dränera till spänningskälla (Vdss)
30V
Ström - Kontinuerlig dränering (Id) @ 25°C
45A (Tc)
Aktiva Rds (Max) @ Id, Vgs
2.2 mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id
2.3V @ 500µA
Portkostnad (Qg) (Max) @ Vgs
34nC @ 10V
Ingångskapacitans (Ciss) (Max) @ Vds
2230pF @ 15V
Drivspänning (Max Active Rds, Min Active Rds)
10V
Vgs (max)
±20V
Begäran om begäran
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