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TPN2010FNH,L1Q
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TPN2010FNH,L1Q

MOSFET N-CH 250V 5.6A 8TSON
Artikelnummer
TPN2010FNH,L1Q
Tillverkare/varumärke
Toshiba Semiconductor and Storage
Serier
U-MOSVIII-H
Sektionsstatus
Active
Förpackning
Tape & Reel (TR)
Teknologi
MOSFET (Metal Oxide)
Driftstemperatur
150°C (TJ)
Monteringstyp
Surface Mount
Paket/fodral
8-PowerVDFN
Leverantörsenhetspaket
8-TSON Advance (3.3x3.3)
Effektförlust (max)
700mW (Ta), 39W (Tc)
FET typ
N-Channel
FET-funktioner
-
Dränera till spänningskälla (Vdss)
250V
Ström - Kontinuerlig dränering (Id) @ 25°C
5.6A (Ta)
Aktiva Rds (Max) @ Id, Vgs
198 mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id
4V @ 200µA
Portkostnad (Qg) (Max) @ Vgs
7nC @ 10V
Ingångskapacitans (Ciss) (Max) @ Vds
600pF @ 100V
Drivspänning (Max Active Rds, Min Active Rds)
10V
Vgs (max)
±20V
Begäran om begäran
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