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TPN22006NH,LQ
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TPN22006NH,LQ

MOSFET N CH 60V 9A 8-TSON
Artikelnummer
TPN22006NH,LQ
Tillverkare/varumärke
Toshiba Semiconductor and Storage
Serier
U-MOSVIII-H
Sektionsstatus
Active
Förpackning
Cut Tape (CT)
Teknologi
MOSFET (Metal Oxide)
Driftstemperatur
150°C (TJ)
Monteringstyp
Surface Mount
Paket/fodral
8-PowerVDFN
Leverantörsenhetspaket
8-TSON Advance (3.3x3.3)
Effektförlust (max)
700mW (Ta), 18W (Tc)
FET typ
N-Channel
FET-funktioner
-
Dränera till spänningskälla (Vdss)
60V
Ström - Kontinuerlig dränering (Id) @ 25°C
9A (Ta)
Aktiva Rds (Max) @ Id, Vgs
22 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
4V @ 100µA
Portkostnad (Qg) (Max) @ Vgs
12nC @ 10V
Ingångskapacitans (Ciss) (Max) @ Vds
710pF @ 30V
Drivspänning (Max Active Rds, Min Active Rds)
6.5V, 10V
Vgs (max)
±20V
Begäran om begäran
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