Toshiba Semiconductor and Storage
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TK10J80E,S1E
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TK10J80E,S1E

MOSFET N-CH 800V TO-3PN
Artikelnummer
TK10J80E,S1E
Tillverkare/varumärke
Toshiba Semiconductor and Storage
Serier
π-MOSVIII
Sektionsstatus
Active
Förpackning
Tube
Teknologi
MOSFET (Metal Oxide)
Driftstemperatur
150°C (TJ)
Monteringstyp
Through Hole
Paket/fodral
TO-3P-3, SC-65-3
Leverantörsenhetspaket
TO-3P(N)
Effektförlust (max)
250W (Tc)
FET typ
N-Channel
FET-funktioner
-
Dränera till spänningskälla (Vdss)
800V
Ström - Kontinuerlig dränering (Id) @ 25°C
10A (Ta)
Aktiva Rds (Max) @ Id, Vgs
1 Ohm @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Portkostnad (Qg) (Max) @ Vgs
46nC @ 10V
Ingångskapacitans (Ciss) (Max) @ Vds
2000pF @ 25V
Drivspänning (Max Active Rds, Min Active Rds)
10V
Vgs (max)
±30V
Begäran om begäran
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