Toshiba Semiconductor and Storage
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TK100S04N1L,LQ
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TK100S04N1L,LQ

MOSFET N-CH 40V 100A DPAK
Artikelnummer
TK100S04N1L,LQ
Tillverkare/varumärke
Toshiba Semiconductor and Storage
Serier
U-MOSVIII-H
Sektionsstatus
Active
Förpackning
Cut Tape (CT)
Teknologi
MOSFET (Metal Oxide)
Driftstemperatur
175°C (TJ)
Monteringstyp
Surface Mount
Paket/fodral
TO-252-3, DPak (2 Leads + Tab), SC-63
Leverantörsenhetspaket
DPAK+
Effektförlust (max)
100W (Tc)
FET typ
N-Channel
FET-funktioner
-
Dränera till spänningskälla (Vdss)
40V
Ström - Kontinuerlig dränering (Id) @ 25°C
100A (Ta)
Aktiva Rds (Max) @ Id, Vgs
2.3 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.5V @ 500µA
Portkostnad (Qg) (Max) @ Vgs
76nC @ 10V
Ingångskapacitans (Ciss) (Max) @ Vds
5490pF @ 10V
Drivspänning (Max Active Rds, Min Active Rds)
4.5V, 10V
Vgs (max)
±20V
Begäran om begäran
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