Toshiba Semiconductor and Storage
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TK100E10N1,S1X
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TK100E10N1,S1X

MOSFET N-CH 100V 100A TO220
Artikelnummer
TK100E10N1,S1X
Tillverkare/varumärke
Toshiba Semiconductor and Storage
Serier
U-MOSVIII-H
Sektionsstatus
Active
Förpackning
Tube
Teknologi
MOSFET (Metal Oxide)
Driftstemperatur
150°C (TJ)
Monteringstyp
Through Hole
Paket/fodral
TO-220-3
Leverantörsenhetspaket
TO-220
Effektförlust (max)
255W (Tc)
FET typ
N-Channel
FET-funktioner
-
Dränera till spänningskälla (Vdss)
100V
Ström - Kontinuerlig dränering (Id) @ 25°C
100A (Ta)
Aktiva Rds (Max) @ Id, Vgs
3.4 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Portkostnad (Qg) (Max) @ Vgs
140nC @ 10V
Ingångskapacitans (Ciss) (Max) @ Vds
8800pF @ 50V
Drivspänning (Max Active Rds, Min Active Rds)
10V
Vgs (max)
±20V
Begäran om begäran
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