Toshiba Semiconductor and Storage
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TK10A60W,S4VX
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TK10A60W,S4VX

MOSFET N-CH 600V 9.7A TO-220SIS
Artikelnummer
TK10A60W,S4VX
Tillverkare/varumärke
Toshiba Semiconductor and Storage
Serier
DTMOSIV
Sektionsstatus
Active
Förpackning
Tube
Teknologi
MOSFET (Metal Oxide)
Driftstemperatur
150°C (TJ)
Monteringstyp
Through Hole
Paket/fodral
TO-220-3 Full Pack
Leverantörsenhetspaket
TO-220SIS
Effektförlust (max)
30W (Tc)
FET typ
N-Channel
FET-funktioner
Super Junction
Dränera till spänningskälla (Vdss)
600V
Ström - Kontinuerlig dränering (Id) @ 25°C
9.7A (Ta)
Aktiva Rds (Max) @ Id, Vgs
380 mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id
3.7V @ 500µA
Portkostnad (Qg) (Max) @ Vgs
20nC @ 10V
Ingångskapacitans (Ciss) (Max) @ Vds
700pF @ 300V
Drivspänning (Max Active Rds, Min Active Rds)
10V
Vgs (max)
±30V
Begäran om begäran
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