Vishay Semiconductor Diodes Division
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GBL10-E3/51
Datablad

GBL10-E3/51

BRIDGE RECT 1PHASE 1KV 3A GBL
Artikelnummer
GBL10-E3/51
Tillverkare/varumärke
Vishay Semiconductor Diodes Division
Sektionsstatus
Active
Teknologi
Standard
Driftstemperatur
-55°C ~ 150°C (TJ)
Monteringstyp
Through Hole
Paket/fodral
4-SIP, GBL
Leverantörsenhetspaket
GBL
Diodtyp
Single Phase
Spänning - inverterad topp (max)
1kV
Aktuell - Genomsnitt korrigerad (Io)
3A
Spänning - Framåt (Vf) (Max) @ If
1.1V @ 4A
Ström - Omvänd läckage @ Vr
5µA @ 1000V
Begäran om begäran
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GBL10-E3/51 Elektroniska komponenter
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GBL10-E3/51 Datatabell
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GBL10-E3/51 Chip