Toshiba Semiconductor and Storage
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TPH7R506NH,L1Q
Datablad

TPH7R506NH,L1Q

MOSFET N CH 60V 22A 8-SOP ADV
Artikelnummer
TPH7R506NH,L1Q
Tillverkare/varumärke
Toshiba Semiconductor and Storage
Serier
U-MOSVIII-H
Sektionsstatus
Active
Förpackning
Cut Tape (CT)
Teknologi
MOSFET (Metal Oxide)
Driftstemperatur
150°C (TJ)
Monteringstyp
Surface Mount
Paket/fodral
8-PowerVDFN
Leverantörsenhetspaket
8-SOP Advance (5x5)
Effektförlust (max)
1.6W (Ta), 45W (Tc)
FET typ
N-Channel
FET-funktioner
-
Dränera till spänningskälla (Vdss)
60V
Ström - Kontinuerlig dränering (Id) @ 25°C
22A (Ta)
Aktiva Rds (Max) @ Id, Vgs
7.5 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 300µA
Portkostnad (Qg) (Max) @ Vgs
31nC @ 10V
Ingångskapacitans (Ciss) (Max) @ Vds
2320pF @ 30V
Drivspänning (Max Active Rds, Min Active Rds)
10V
Vgs (max)
±20V
Begäran om begäran
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