Toshiba Semiconductor and Storage
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TPH5200FNH,L1Q
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TPH5200FNH,L1Q

MOSFET N-CH 250V 26A SOP8
Artikelnummer
TPH5200FNH,L1Q
Tillverkare/varumärke
Toshiba Semiconductor and Storage
Serier
U-MOSVIII-H
Sektionsstatus
Active
Förpackning
Digi-Reel®
Teknologi
MOSFET (Metal Oxide)
Driftstemperatur
150°C (TJ)
Monteringstyp
Surface Mount
Paket/fodral
8-PowerVDFN
Leverantörsenhetspaket
8-SOP Advance (5x5)
Effektförlust (max)
78W (Tc)
FET typ
N-Channel
FET-funktioner
-
Dränera till spänningskälla (Vdss)
250V
Ström - Kontinuerlig dränering (Id) @ 25°C
26A (Tc)
Aktiva Rds (Max) @ Id, Vgs
52 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Portkostnad (Qg) (Max) @ Vgs
22nC @ 10V
Ingångskapacitans (Ciss) (Max) @ Vds
2200pF @ 100V
Drivspänning (Max Active Rds, Min Active Rds)
10V
Vgs (max)
±20V
Begäran om begäran
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