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TK9A65W,S5X
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TK9A65W,S5X

MOSFET N-CH 650V 9.3A TO-220SIS
Artikelnummer
TK9A65W,S5X
Tillverkare/varumärke
Toshiba Semiconductor and Storage
Serier
DTMOSIV
Sektionsstatus
Active
Förpackning
Tube
Teknologi
MOSFET (Metal Oxide)
Driftstemperatur
150°C (TJ)
Monteringstyp
Through Hole
Paket/fodral
TO-220-3 Full Pack
Leverantörsenhetspaket
TO-220SIS
Effektförlust (max)
30W (Tc)
FET typ
N-Channel
FET-funktioner
-
Dränera till spänningskälla (Vdss)
650V
Ström - Kontinuerlig dränering (Id) @ 25°C
9.3A (Ta)
Aktiva Rds (Max) @ Id, Vgs
500 mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id
3.5V @ 350µA
Portkostnad (Qg) (Max) @ Vgs
20nC @ 10V
Ingångskapacitans (Ciss) (Max) @ Vds
700pF @ 300V
Drivspänning (Max Active Rds, Min Active Rds)
10V
Vgs (max)
±30V
Begäran om begäran
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