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TK39N60X,S1F
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TK39N60X,S1F

MOSFET N-CH 600V 38.8A TO-247
Artikelnummer
TK39N60X,S1F
Tillverkare/varumärke
Toshiba Semiconductor and Storage
Serier
DTMOSIV-H
Sektionsstatus
Active
Förpackning
Tube
Teknologi
MOSFET (Metal Oxide)
Driftstemperatur
150°C (TJ)
Monteringstyp
Through Hole
Paket/fodral
TO-247-3
Leverantörsenhetspaket
TO-247
Effektförlust (max)
270W (Tc)
FET typ
N-Channel
FET-funktioner
Super Junction
Dränera till spänningskälla (Vdss)
600V
Ström - Kontinuerlig dränering (Id) @ 25°C
38.8A (Ta)
Aktiva Rds (Max) @ Id, Vgs
65 mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1.9mA
Portkostnad (Qg) (Max) @ Vgs
85nC @ 10V
Ingångskapacitans (Ciss) (Max) @ Vds
4100pF @ 300V
Drivspänning (Max Active Rds, Min Active Rds)
10V
Vgs (max)
±30V
Begäran om begäran
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