Toshiba Semiconductor and Storage
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TK25E60X,S1X
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TK25E60X,S1X

MOSFET N-CH 600V 25A TO-220AB
Artikelnummer
TK25E60X,S1X
Tillverkare/varumärke
Toshiba Semiconductor and Storage
Serier
DTMOSIV-H
Sektionsstatus
Active
Förpackning
Tube
Teknologi
MOSFET (Metal Oxide)
Driftstemperatur
150°C (TJ)
Monteringstyp
Through Hole
Paket/fodral
TO-220-3
Leverantörsenhetspaket
TO-220
Effektförlust (max)
180W (Tc)
FET typ
N-Channel
FET-funktioner
-
Dränera till spänningskälla (Vdss)
600V
Ström - Kontinuerlig dränering (Id) @ 25°C
25A (Ta)
Aktiva Rds (Max) @ Id, Vgs
125 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1.2mA
Portkostnad (Qg) (Max) @ Vgs
40nC @ 10V
Ingångskapacitans (Ciss) (Max) @ Vds
2400pF @ 300V
Drivspänning (Max Active Rds, Min Active Rds)
10V
Vgs (max)
±30V
Begäran om begäran
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