Toshiba Semiconductor and Storage
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TK20P04M1,RQ(S
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TK20P04M1,RQ(S

MOSFET N-CH 40V 20A DPAK-3
Artikelnummer
TK20P04M1,RQ(S
Tillverkare/varumärke
Toshiba Semiconductor and Storage
Serier
U-MOSVI-H
Sektionsstatus
Active
Förpackning
Tape & Reel (TR)
Teknologi
MOSFET (Metal Oxide)
Driftstemperatur
150°C (TJ)
Monteringstyp
Surface Mount
Paket/fodral
TO-252-3, DPak (2 Leads + Tab), SC-63
Leverantörsenhetspaket
DPAK
Effektförlust (max)
27W (Tc)
FET typ
N-Channel
FET-funktioner
-
Dränera till spänningskälla (Vdss)
40V
Ström - Kontinuerlig dränering (Id) @ 25°C
20A (Ta)
Aktiva Rds (Max) @ Id, Vgs
29 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.3V @ 100µA
Portkostnad (Qg) (Max) @ Vgs
15nC @ 10V
Ingångskapacitans (Ciss) (Max) @ Vds
985pF @ 10V
Drivspänning (Max Active Rds, Min Active Rds)
4.5V, 10V
Vgs (max)
±20V
Begäran om begäran
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