Toshiba Semiconductor and Storage
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TK20E60W,S1VX
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TK20E60W,S1VX

MOSFET N-CH 600V 20A TO-220
Artikelnummer
TK20E60W,S1VX
Tillverkare/varumärke
Toshiba Semiconductor and Storage
Serier
DTMOSIV
Sektionsstatus
Active
Förpackning
Tube
Teknologi
MOSFET (Metal Oxide)
Driftstemperatur
150°C (TJ)
Monteringstyp
Through Hole
Paket/fodral
TO-220-3
Leverantörsenhetspaket
TO-220
Effektförlust (max)
165W (Tc)
FET typ
N-Channel
FET-funktioner
-
Dränera till spänningskälla (Vdss)
600V
Ström - Kontinuerlig dränering (Id) @ 25°C
20A (Ta)
Aktiva Rds (Max) @ Id, Vgs
155 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3.7V @ 1mA
Portkostnad (Qg) (Max) @ Vgs
48nC @ 10V
Ingångskapacitans (Ciss) (Max) @ Vds
1680pF @ 300V
Drivspänning (Max Active Rds, Min Active Rds)
10V
Vgs (max)
±30V
Begäran om begäran
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