Toshiba Semiconductor and Storage
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TK16J60W,S1VQ
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TK16J60W,S1VQ

MOSFET N CH 600V 15.8A TO-3P(N)
Artikelnummer
TK16J60W,S1VQ
Tillverkare/varumärke
Toshiba Semiconductor and Storage
Serier
DTMOSIV
Sektionsstatus
Active
Förpackning
Tube
Teknologi
MOSFET (Metal Oxide)
Driftstemperatur
150°C (TJ)
Monteringstyp
Through Hole
Paket/fodral
TO-3P-3, SC-65-3
Leverantörsenhetspaket
TO-3P(N)
Effektförlust (max)
130W (Tc)
FET typ
N-Channel
FET-funktioner
Super Junction
Dränera till spänningskälla (Vdss)
600V
Ström - Kontinuerlig dränering (Id) @ 25°C
15.8A (Ta)
Aktiva Rds (Max) @ Id, Vgs
190 mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id
3.7V @ 790µA
Portkostnad (Qg) (Max) @ Vgs
38nC @ 10V
Ingångskapacitans (Ciss) (Max) @ Vds
1350pF @ 300V
Drivspänning (Max Active Rds, Min Active Rds)
10V
Vgs (max)
±30V
Begäran om begäran
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