Toshiba Semiconductor and Storage
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TK12V60W,LVQ
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TK12V60W,LVQ

MOSFET N CH 600V 11.5A 5DFN
Artikelnummer
TK12V60W,LVQ
Tillverkare/varumärke
Toshiba Semiconductor and Storage
Serier
DTMOSIV
Sektionsstatus
Active
Förpackning
Tape & Reel (TR)
Teknologi
MOSFET (Metal Oxide)
Driftstemperatur
150°C (TJ)
Monteringstyp
Surface Mount
Paket/fodral
4-VSFN Exposed Pad
Leverantörsenhetspaket
4-DFN-EP (8x8)
Effektförlust (max)
104W (Tc)
FET typ
N-Channel
FET-funktioner
Super Junction
Dränera till spänningskälla (Vdss)
600V
Ström - Kontinuerlig dränering (Id) @ 25°C
11.5A (Ta)
Aktiva Rds (Max) @ Id, Vgs
300 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id
3.7V @ 600µA
Portkostnad (Qg) (Max) @ Vgs
25nC @ 10V
Ingångskapacitans (Ciss) (Max) @ Vds
890pF @ 300V
Drivspänning (Max Active Rds, Min Active Rds)
10V
Vgs (max)
±30V
Begäran om begäran
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