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NVMD3P03R2G
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NVMD3P03R2G

MOSFET 2P-CH 30V 2.34A 8SOIC
Artikelnummer
NVMD3P03R2G
Tillverkare/varumärke
ON Semiconductor
Serier
-
Sektionsstatus
Active
Förpackning
Tape & Reel (TR)
Driftstemperatur
-55°C ~ 150°C (TJ)
Monteringstyp
Surface Mount
Paket/fodral
8-SOIC (0.154", 3.90mm Width)
Effekt - Max
730mW
Leverantörsenhetspaket
8-SOIC
FET typ
2 P-Channel (Dual)
FET-funktioner
Logic Level Gate
Dränera till spänningskälla (Vdss)
30V
Ström - Kontinuerlig dränering (Id) @ 25°C
2.34A
Aktiva Rds (Max) @ Id, Vgs
85 mOhm @ 3.05A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Portkostnad (Qg) (Max) @ Vgs
25nC @ 10V
Ingångskapacitans (Ciss) (Max) @ Vds
750pF @ 24V
Begäran om begäran
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