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NGTD13T65F2WP
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NGTD13T65F2WP

IGBT TRENCH FIELD STOP 650V DIE
Artikelnummer
NGTD13T65F2WP
Tillverkare/varumärke
ON Semiconductor
Serier
-
Sektionsstatus
Active
Förpackning
Bulk
Ingångstyp
Standard
Driftstemperatur
-55°C ~ 175°C (TJ)
Monteringstyp
Surface Mount
Paket/fodral
Die
Effekt - Max
-
Leverantörsenhetspaket
Die
Omvänd återhämtningstid (trr)
-
Aktuell - Samlare (Ic) (Max)
-
Spänning - Emitter Collector Breakdown (Max)
650V
IGBT typ
Trench Field Stop
Vce(aktiv) (Max) @ Vge, Ic
2.2V @ 15V, 30A
Ström - Pulserande samlare (Icm)
120A
Energiövergång
-
Gateavgifter
-
BP (på/av) vid 25°C
-
Konditionstest
-
Begäran om begäran
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I lager 12675 PCS
Kontaktinformation
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Nyckelord av NGTD13T65F2WP
NGTD13T65F2WP Elektroniska komponenter
NGTD13T65F2WP Försäljning
NGTD13T65F2WP Leverantör
NGTD13T65F2WP Distributör
NGTD13T65F2WP Datatabell
NGTD13T65F2WP Foton
NGTD13T65F2WP Pris
NGTD13T65F2WP Erbjudande
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NGTD13T65F2WP Chip