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FDP020N06B-F102
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FDP020N06B-F102

MOSFET N-CH 60V 120A TO-220-3
Artikelnummer
FDP020N06B-F102
Tillverkare/varumärke
ON Semiconductor
Serier
PowerTrench®
Sektionsstatus
Active
Förpackning
Tube
Teknologi
MOSFET (Metal Oxide)
Driftstemperatur
-55°C ~ 175°C (TJ)
Monteringstyp
Through Hole
Paket/fodral
TO-220-3
Leverantörsenhetspaket
TO-220-3
Effektförlust (max)
333W (Tc)
FET typ
N-Channel
FET-funktioner
-
Dränera till spänningskälla (Vdss)
60V
Ström - Kontinuerlig dränering (Id) @ 25°C
120A (Tc)
Aktiva Rds (Max) @ Id, Vgs
2 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Portkostnad (Qg) (Max) @ Vgs
268nC @ 10V
Ingångskapacitans (Ciss) (Max) @ Vds
20930pF @ 30V
Drivspänning (Max Active Rds, Min Active Rds)
10V
Vgs (max)
±20V
Begäran om begäran
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I lager 30575 PCS
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