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FCP20N60_G

FCP20N60_G

INTEGRATED CIRCUIT
Artikelnummer
FCP20N60_G
Tillverkare/varumärke
ON Semiconductor
Serier
SuperFET™
Sektionsstatus
Obsolete
Förpackning
Tube
Teknologi
MOSFET (Metal Oxide)
Driftstemperatur
-55°C ~ 150°C (TJ)
Monteringstyp
Through Hole
Paket/fodral
TO-220-3
Leverantörsenhetspaket
TO-220-3
Effektförlust (max)
208W (Tc)
FET typ
N-Channel
FET-funktioner
-
Dränera till spänningskälla (Vdss)
600V
Ström - Kontinuerlig dränering (Id) @ 25°C
20A (Tc)
Aktiva Rds (Max) @ Id, Vgs
190 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Portkostnad (Qg) (Max) @ Vgs
98nC @ 10V
Ingångskapacitans (Ciss) (Max) @ Vds
3080pF @ 25V
Drivspänning (Max Active Rds, Min Active Rds)
10V
Vgs (max)
±30V
Begäran om begäran
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I lager 53106 PCS
Kontaktinformation
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