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EFC6601R-A-TR

EFC6601R-A-TR

MOSFET 2N-CH EFCP
Artikelnummer
EFC6601R-A-TR
Tillverkare/varumärke
ON Semiconductor
Serier
-
Sektionsstatus
Active
Förpackning
Tape & Reel (TR)
Driftstemperatur
150°C (TJ)
Monteringstyp
Surface Mount
Paket/fodral
6-XFBGA, FCBGA
Effekt - Max
2W
Leverantörsenhetspaket
EFCP2718-6CE-020
FET typ
2 N-Channel (Dual) Common Drain
FET-funktioner
Logic Level Gate, 2.5V Drive
Dränera till spänningskälla (Vdss)
-
Ström - Kontinuerlig dränering (Id) @ 25°C
-
Aktiva Rds (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Portkostnad (Qg) (Max) @ Vgs
48nC @ 4.5V
Ingångskapacitans (Ciss) (Max) @ Vds
-
Begäran om begäran
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