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NCV5106ADR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side

NCV5106ADR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side
Artikelnummer
NCV5106ADR2G
Kategori
Power Chip > Gate Driver IC
Tillverkare/varumärke
onsemi (Ansemi)
Inkapsling
SOIC-8
Förpackning
taping
Antal paket
2500
Beskrivning
The NCP5106 is a high voltage gate driver integrated circuit providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in half-bridge configuration version B or any other high side + low side configuration version A. It uses a bootstrap technique to ensure proper driving of the high side power switch. The driver uses 2 independent inputs. NCP5109 = 200V, NCP5106 = 600V
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NCV5106ADR2G Elektroniska komponenter
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NCV5106ADR2G Distributör
NCV5106ADR2G Datatabell
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NCV5106ADR2G Chip