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SQJQ100E-T1_GE3
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SQJQ100E-T1_GE3

Product Overview

  • Category: Semiconductor
  • Use: Power MOSFET for switching applications
  • Characteristics: High voltage, low on-resistance, fast switching speed
  • Package: TO-252-3 (DPAK)
  • Essence: Efficient power management
  • Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

  • Voltage Rating: 100V
  • Current Rating: 60A
  • On-Resistance: 10mΩ
  • Gate Charge: 30nC
  • Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

  • Pin 1: Gate
  • Pin 2: Drain
  • Pin 3: Source

Functional Features

  • Fast switching for high efficiency
  • Low on-resistance for reduced power loss
  • Enhanced thermal performance for reliability

Advantages and Disadvantages

  • Advantages:
    • High voltage rating
    • Low on-resistance
    • Fast switching speed
  • Disadvantages:
    • Sensitive to overvoltage conditions

Working Principles

The SQJQ100E-T1_GE3 operates by controlling the flow of current between the drain and source terminals using the gate voltage. When a suitable voltage is applied to the gate, the MOSFET allows current to pass through, enabling efficient power switching.

Detailed Application Field Plans

  1. Power Supplies: Utilized in high-efficiency DC-DC converters and voltage regulators.
  2. Motor Control: Suitable for motor drive applications due to its fast switching characteristics.
  3. Inverters: Used in inverters for solar power systems and industrial equipment.

Detailed and Complete Alternative Models

  1. SQJQ80E-T1_GE3: 80V, 50A, 8mΩ on-resistance
  2. SQJQ120E-T1_GE3: 120V, 70A, 12mΩ on-resistance
  3. SQJQ150E-T1_GE3: 150V, 80A, 15mΩ on-resistance

This comprehensive entry provides an in-depth understanding of the SQJQ100E-T1_GE3 Power MOSFET, covering its specifications, features, applications, and alternatives.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av SQJQ100E-T1_GE3 i tekniska lösningar

  1. What is the maximum operating temperature of SQJQ100E-T1_GE3?

    • The maximum operating temperature of SQJQ100E-T1_GE3 is 150°C.

  2. What is the typical forward voltage drop of SQJQ100E-T1_GE3?

    • The typical forward voltage drop of SQJQ100E-T1_GE3 is 0.55V at 10A.

  3. What is the reverse recovery time of SQJQ100E-T1_GE3?

    • The reverse recovery time of SQJQ100E-T1_GE3 is typically 35ns.

  4. What is the maximum continuous forward current rating of SQJQ100E-T1_GE3?

    • The maximum continuous forward current rating of SQJQ100E-T1_GE3 is 100A.

  5. Does SQJQ100E-T1_GE3 have a low leakage current?

    • Yes, SQJQ100E-T1_GE3 has a low leakage current, making it suitable for high-efficiency applications.

  6. Is SQJQ100E-T1_GE3 suitable for use in automotive electronics?

    • Yes, SQJQ100E-T1_GE3 is designed for automotive applications and meets the necessary standards.

  7. What is the package type of SQJQ100E-T1_GE3?

    • SQJQ100E-T1_GE3 comes in a DPAK (TO-252) package.

  8. Can SQJQ100E-T1_GE3 be used in switching power supplies?

    • Yes, SQJQ100E-T1_GE3 is suitable for use in switching power supply designs.

  9. Does SQJQ100E-T1_GE3 have built-in ESD protection?

    • Yes, SQJQ100E-T1_GE3 features built-in ESD protection for enhanced reliability.

  10. What are the typical applications for SQJQ100E-T1_GE3?

    • Typical applications for SQJQ100E-T1_GE3 include motor drives, DC/DC converters, and battery management systems.