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SIR802DP-T1-GE3
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SIR802DP-T1-GE3

Product Overview

Category

The SIR802DP-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and power switching.

Characteristics

  • High efficiency
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The SIR802DP-T1-GE3 is typically available in a compact and industry-standard PowerPAK® SO-8 package.

Essence

This MOSFET offers high performance and reliability in power management applications.

Packaging/Quantity

It is usually supplied in reels with a standard quantity per reel.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 100A
  • RDS(ON) (Max) @ VGS = 10V: 1.5mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 35nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIR802DP-T1-GE3 features a standard SO-8 pin configuration: 1. Source 2. Gate 3. Drain 4. N/C 5. N/C 6. Drain 7. Gate 8. Source

Functional Features

  • Low on-resistance for minimal power dissipation
  • Fast switching speed for efficient power management
  • Robust construction for reliable operation in various conditions

Advantages and Disadvantages

Advantages

  • High efficiency
  • Compact package
  • Reliable performance

Disadvantages

  • Higher cost compared to traditional MOSFETs
  • Sensitivity to electrostatic discharge (ESD)

Working Principles

The SIR802DP-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

The SIR802DP-T1-GE3 is well-suited for a wide range of power management applications, including: - DC-DC converters - Motor control - Battery management systems - LED lighting

Detailed and Complete Alternative Models

  • SIR801DP-T1-GE3
  • SIR804DP-T1-GE3
  • SIR808DP-T1-GE3

In conclusion, the SIR802DP-T1-GE3 power MOSFET offers high-performance characteristics and is suitable for various power management applications, despite its higher cost and sensitivity to ESD. Its working principles and detailed application field plans make it a versatile component in modern electronic systems.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av SIR802DP-T1-GE3 i tekniska lösningar

  1. What is the maximum voltage rating of SIR802DP-T1-GE3?

    • The maximum voltage rating of SIR802DP-T1-GE3 is 30V.

  2. What is the typical on-state resistance of SIR802DP-T1-GE3?

    • The typical on-state resistance of SIR802DP-T1-GE3 is 4.5 mΩ.

  3. What is the maximum continuous drain current of SIR802DP-T1-GE3?

    • The maximum continuous drain current of SIR802DP-T1-GE3 is 100A.

  4. What is the typical gate charge of SIR802DP-T1-GE3?

    • The typical gate charge of SIR802DP-T1-GE3 is 18nC.

  5. What are the typical applications for SIR802DP-T1-GE3?

    • SIR802DP-T1-GE3 is commonly used in synchronous buck converters, motor drives, and power management applications.

  6. What is the operating temperature range of SIR802DP-T1-GE3?

    • The operating temperature range of SIR802DP-T1-GE3 is -55°C to 150°C.

  7. Does SIR802DP-T1-GE3 have overcurrent protection?

    • Yes, SIR802DP-T1-GE3 features overcurrent protection to safeguard against excessive currents.

  8. Is SIR802DP-T1-GE3 suitable for automotive applications?

    • Yes, SIR802DP-T1-GE3 is designed for automotive applications and meets AEC-Q101 standards.

  9. What is the package type of SIR802DP-T1-GE3?

    • SIR802DP-T1-GE3 comes in a PowerPAK® SO-8 package.

  10. Does SIR802DP-T1-GE3 require an external gate driver?

    • SIR802DP-T1-GE3 can be driven directly by a microcontroller or an external gate driver, depending on the application requirements.