IXTP36N30P
Product Overview
Category: Power MOSFET
Use: High power switching applications
Characteristics: High voltage, high current capability
Package: TO-220AB
Essence: Power efficiency and reliability
Packaging/Quantity: 50 pieces per tube
Specifications
- Voltage Rating: 300V
- Current Rating: 36A
- RDS(ON): 0.08 Ohm
- Gate Threshold Voltage: 2.5V
- Power Dissipation: 200W
Detailed Pin Configuration
The IXTP36N30P has a standard TO-220AB pin configuration with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Low on-state resistance
- Fast switching speed
- High input impedance
- Avalanche energy specified
- Improved dv/dt capability
Advantages and Disadvantages
Advantages: - High voltage and current ratings - Low on-state resistance - Fast switching speed - Enhanced thermal performance
Disadvantages: - Relatively large package size - Higher gate threshold voltage compared to some alternatives
Working Principles
The IXTP36N30P operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the flow of current through the device. When a sufficient voltage is applied to the gate terminal, it creates an electric field that allows current to flow between the drain and source terminals.
Detailed Application Field Plans
The IXTP36N30P is suitable for a wide range of high-power applications, including: - Switching power supplies - Motor control - Inverters - Welding equipment - Uninterruptible power supplies (UPS) - Solar inverters
Detailed and Complete Alternative Models
Some alternative models to the IXTP36N30P include: - IRFP460: Similar voltage and current ratings - FDPF33N25T: Lower on-state resistance - STP36NF06L: Lower gate threshold voltage
In conclusion, the IXTP36N30P is a high-voltage, high-current power MOSFET designed for efficient and reliable performance in various high-power switching applications.
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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IXTP36N30P i tekniska lösningar
What is IXTP36N30P?
- IXTP36N30P is a high-performance power MOSFET designed for various technical solutions requiring efficient power management.
What are the key specifications of IXTP36N30P?
- The key specifications include a voltage rating of 300V, a continuous drain current of 36A, and low on-resistance for improved efficiency.
In what applications can IXTP36N30P be used?
- IXTP36N30P is commonly used in applications such as motor control, power supplies, inverters, and other high-power switching circuits.
What are the thermal characteristics of IXTP36N30P?
- The MOSFET has low thermal resistance and is designed to efficiently dissipate heat, making it suitable for high-power applications.
How does IXTP36N30P contribute to energy efficiency?
- IXTP36N30P's low on-resistance and high current-carrying capability help minimize power losses and improve overall energy efficiency in power management systems.
What protection features does IXTP36N30P offer?
- The MOSFET provides built-in protection against overcurrent, overvoltage, and thermal overload, enhancing system reliability.
Can IXTP36N30P be used in automotive applications?
- Yes, IXTP36N30P is suitable for automotive applications such as electric vehicle powertrains, battery management systems, and onboard chargers.
What are the advantages of using IXTP36N30P in industrial equipment?
- In industrial equipment, IXTP36N30P offers high reliability, ruggedness, and efficient power handling, making it ideal for demanding operating conditions.
How does IXTP36N30P facilitate compact design in electronic devices?
- With its high power density and efficient performance, IXTP36N30P enables the design of compact and space-saving electronic devices.
Where can I find detailed application notes and technical resources for IXTP36N30P?
- Detailed application notes and technical resources for IXTP36N30P can be found on the manufacturer's website or by contacting their technical support team.