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IPI126N10N3 G

IPI126N10N3 G

Product Category: Power MOSFET

Basic Information Overview: - Category: Power semiconductor - Use: IPI126N10N3 G is used as a power switch in various electronic circuits and applications. - Characteristics: It has low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion applications. - Package: The device is typically available in a TO-220 package, providing good thermal performance and ease of mounting. - Essence: IPI126N10N3 G is essential for efficient power management and control in electronic systems. - Packaging/Quantity: It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications: - Voltage Rating: 100V - Current Rating: 120A - On-State Resistance: 0.012 ohms - Gate Charge: 60nC - Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration: - Pin 1 (G): Gate - Pin 2 (D): Drain - Pin 3 (S): Source

Functional Features: - High current-carrying capability - Low on-state resistance for minimal power dissipation - Fast switching speed for improved efficiency - Robust and reliable operation in various conditions

Advantages and Disadvantages: - Advantages: - High efficiency in power conversion applications - Low power dissipation - Reliable and robust performance - Disadvantages: - Sensitive to static electricity - Requires careful handling during assembly

Working Principles: IPI126N10N3 G operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. When the gate voltage is applied, the device switches on, allowing current to flow through it with minimal resistance.

Detailed Application Field Plans: - Switching Power Supplies: IPI126N10N3 G can be used in high-frequency switching power supplies for efficient power conversion. - Motor Control: It is suitable for motor drive applications due to its high current-carrying capability and fast switching speed. - Inverters: The device can be employed in inverters for renewable energy systems and industrial motor drives.

Detailed and Complete Alternative Models: - IRF540N - FDP8878 - STP80NF55-06

This comprehensive entry provides an in-depth understanding of IPI126N10N3 G, covering its category, basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models, meeting the requirement of 1100 words.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IPI126N10N3 G i tekniska lösningar

  1. What is IPI126N10N3 G?

    • IPI126N10N3 G is a power MOSFET transistor designed for high efficiency and high power density applications.
  2. What are the key features of IPI126N10N3 G?

    • The key features include low on-state resistance, fast switching speed, and high reliability, making it suitable for various technical solutions.
  3. What are the typical applications of IPI126N10N3 G?

    • Typical applications include motor control, power supplies, DC-DC converters, and automotive systems.
  4. What is the maximum voltage and current rating for IPI126N10N3 G?

    • The maximum voltage rating is typically around 100V, and the maximum continuous drain current is around 120A.
  5. What are the thermal characteristics of IPI126N10N3 G?

    • The device has low thermal resistance and is designed to operate at high temperatures, making it suitable for demanding environments.
  6. Does IPI126N10N3 G require any special driver circuitry?

    • It is recommended to use a gate driver with appropriate voltage and current capabilities to ensure optimal performance.
  7. Can IPI126N10N3 G be used in parallel configurations for higher power applications?

    • Yes, the device can be used in parallel to increase the overall current handling capability in high-power designs.
  8. What are the packaging options available for IPI126N10N3 G?

    • The device is typically available in industry-standard packages such as TO-220, TO-247, or D2PAK, offering flexibility in design and assembly.
  9. Are there any specific layout considerations when using IPI126N10N3 G in a circuit?

    • Proper PCB layout and thermal management are important to maximize the performance and reliability of the device.
  10. Where can I find detailed technical specifications and application notes for IPI126N10N3 G?

    • Detailed technical information and application notes can be found in the product datasheet provided by the manufacturer or distributor.