IPD082N10N3GBTMA1
Product Overview
Category
The IPD082N10N3GBTMA1 belongs to the category of power MOSFETs.
Use
It is used as a high-performance switching device in various electronic circuits and applications.
Characteristics
- High power handling capability
- Low on-state resistance
- Fast switching speed
- Low gate charge
- Enhanced thermal performance
Package
The IPD082N10N3GBTMA1 is typically available in a TO-252 package.
Essence
This MOSFET is essential for efficient power management and control in electronic systems.
Packaging/Quantity
It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 100V
- Continuous Drain Current (ID): 82A
- RDS(ON) Max @ VGS = 10V: 4.5mΩ
- Gate-Source Voltage (VGS) Max: ±20V
- Total Gate Charge (Qg): 60nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPD082N10N3GBTMA1 follows the standard pin configuration for power MOSFETs, with the gate, drain, and source pins clearly labeled and positioned according to industry standards.
Functional Features
- High current-carrying capability
- Low conduction losses
- Fast switching characteristics
- Robust thermal performance
- Compatibility with various driving circuits
Advantages
- Efficient power handling
- Reduced power dissipation
- Enhanced system reliability
- Suitable for high-frequency applications
- Compact form factor
Disadvantages
- Higher cost compared to standard MOSFETs
- Sensitive to electrostatic discharge (ESD)
- Requires careful handling during assembly
Working Principles
The IPD082N10N3GBTMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity within the semiconductor material. When properly biased, it allows for efficient control of current flow in electronic circuits.
Detailed Application Field Plans
The IPD082N10N3GBTMA1 finds extensive use in: - Switch-mode power supplies - Motor control systems - DC-DC converters - Inverters - Battery management systems - Automotive electronics
Detailed and Complete Alternative Models
Some alternative models to the IPD082N10N3GBTMA1 include: - IPB082N10N3G - IPP082N10N3G - IPW082N10N3G - IRF082N10N3G - IXYS082N10N3G
In conclusion, the IPD082N10N3GBTMA1 power MOSFET offers high-performance characteristics suitable for a wide range of power management applications, making it a valuable component in modern electronic systems.
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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IPD082N10N3GBTMA1 i tekniska lösningar
What is the maximum drain-source voltage of IPD082N10N3GBTMA1?
- The maximum drain-source voltage of IPD082N10N3GBTMA1 is 100V.
What is the continuous drain current rating of IPD082N10N3GBTMA1?
- The continuous drain current rating of IPD082N10N3GBTMA1 is 82A.
What is the on-state resistance (RDS(on)) of IPD082N10N3GBTMA1?
- The on-state resistance (RDS(on)) of IPD082N10N3GBTMA1 is typically 8.5mΩ at VGS = 10V.
What is the gate threshold voltage of IPD082N10N3GBTMA1?
- The gate threshold voltage of IPD082N10N3GBTMA1 is typically 2.5V.
What is the input capacitance of IPD082N10N3GBTMA1?
- The input capacitance of IPD082N10N3GBTMA1 is typically 6800pF.
What are the recommended operating temperature range for IPD082N10N3GBTMA1?
- The recommended operating temperature range for IPD082N10N3GBTMA1 is -55°C to 175°C.
What is the package type of IPD082N10N3GBTMA1?
- IPD082N10N3GBTMA1 comes in a TO-252-3 package.
Is IPD082N10N3GBTMA1 suitable for high-power applications?
- Yes, IPD082N10N3GBTMA1 is suitable for high-power applications due to its high current and voltage ratings.
Does IPD082N10N3GBTMA1 require a heatsink for operation?
- Depending on the application and power dissipation, a heatsink may be required for optimal performance of IPD082N10N3GBTMA1.
What are some typical applications for IPD082N10N3GBTMA1?
- IPD082N10N3GBTMA1 is commonly used in motor control, power supplies, and DC-DC converters.