Toshiba Semiconductor and Storage
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TK6A80E,S4X
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TK6A80E,S4X

MOSFET N-CH 800V TO220SIS
Artikelnummer
TK6A80E,S4X
Tillverkare/varumärke
Toshiba Semiconductor and Storage
Serier
π-MOSVIII
Sektionsstatus
Active
Förpackning
Tube
Teknologi
MOSFET (Metal Oxide)
Driftstemperatur
150°C (TJ)
Monteringstyp
Through Hole
Paket/fodral
TO-220-3 Full Pack
Leverantörsenhetspaket
TO-220SIS
Effektförlust (max)
45W (Tc)
FET typ
N-Channel
FET-funktioner
-
Dränera till spänningskälla (Vdss)
800V
Ström - Kontinuerlig dränering (Id) @ 25°C
6A (Ta)
Aktiva Rds (Max) @ Id, Vgs
1.7 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id
4V @ 600µA
Portkostnad (Qg) (Max) @ Vgs
32nC @ 10V
Ingångskapacitans (Ciss) (Max) @ Vds
1350pF @ 25V
Drivspänning (Max Active Rds, Min Active Rds)
10V
Vgs (max)
±30V
Begäran om begäran
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