Toshiba Semiconductor and Storage
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RN1966FE(TE85L,F)
Datablad

RN1966FE(TE85L,F)

TRANS 2NPN PREBIAS 0.1W ES6
Artikelnummer
RN1966FE(TE85L,F)
Tillverkare/varumärke
Toshiba Semiconductor and Storage
Serier
-
Sektionsstatus
Obsolete
Förpackning
Cut Tape (CT)
Monteringstyp
Surface Mount
Paket/fodral
SOT-563, SOT-666
Effekt - Max
100mW
Leverantörsenhetspaket
ES6
Typer av transistorer
2 NPN - Pre-Biased (Dual)
Aktuell - Samlare (Ic) (Max)
100mA
Spänning - Emitter Collector Breakdown (Max)
50V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Ström - samlargräns (max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Frekvens - Övergång
250MHz
Motstånd - bas (R1)
4.7 kOhms
Motstånd - Emitter Base (R2)
47 kOhms
Begäran om begäran
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I lager 36844 PCS
Kontaktinformation
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