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NVMFD5C650NLT1G
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NVMFD5C650NLT1G

MOSFET 2N-CH 60V 111A S08FL
Artikelnummer
NVMFD5C650NLT1G
Tillverkare/varumärke
ON Semiconductor
Serier
Automotive, AEC-Q101
Sektionsstatus
Active
Förpackning
Tape & Reel (TR)
Driftstemperatur
-55°C ~ 175°C (TJ)
Monteringstyp
Surface Mount
Paket/fodral
8-PowerTDFN
Effekt - Max
3.5W (Ta), 125W (Tc)
Leverantörsenhetspaket
8-DFN (5x6) Dual Flag (SO8FL-Dual)
FET typ
2 N-Channel (Dual)
FET-funktioner
Standard
Dränera till spänningskälla (Vdss)
60V
Ström - Kontinuerlig dränering (Id) @ 25°C
21A (Ta), 111A (Tc)
Aktiva Rds (Max) @ Id, Vgs
4.2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.2V @ 98µA
Portkostnad (Qg) (Max) @ Vgs
16nC @ 4.5V
Ingångskapacitans (Ciss) (Max) @ Vds
2546pF @ 25V
Begäran om begäran
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