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NCP5181DR2G
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NCP5181DR2G

IC MOSFET DRVR HIGH VOLT 8-SOIC
Artikelnummer
NCP5181DR2G
Tillverkare/varumärke
ON Semiconductor
Serier
-
Sektionsstatus
Active
Förpackning
Tape & Reel (TR)
Ingångstyp
Non-Inverting
Driftstemperatur
-40°C ~ 150°C (TJ)
Monteringstyp
Surface Mount
Paket/fodral
8-SOIC (0.154", 3.90mm Width)
Leverantörsenhetspaket
8-SOIC
Spänningskälla
10 V ~ 20 V
Kanaltyp
Independent
Driven konfiguration
Half-Bridge
Antal förare
2
Porttyp
N-Channel MOSFET
Logikspänning - VIL, VIH
0.8V, 2.3V
Ström - topputgång (källa, sjunka)
1.4A, 2.2A
Hög sidospänning - Max (Bootstrap)
600V
Upp/nertider (tips)
40ns, 20ns
Begäran om begäran
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NCP5181DR2G Chip