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IPS110N12N3GBKMA1
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IPS110N12N3GBKMA1

MOSFET N-CH 120V 75A TO251-3
Artikelnummer
IPS110N12N3GBKMA1
Tillverkare/varumärke
Infineon Technologies
Serier
OptiMOS™
Sektionsstatus
Obsolete
Förpackning
Tape & Reel (TR)
Teknologi
MOSFET (Metal Oxide)
Driftstemperatur
-55°C ~ 175°C (TJ)
Monteringstyp
Through Hole
Paket/fodral
TO-251-3 Stub Leads, IPak
Leverantörsenhetspaket
PG-TO251-3
Effektförlust (max)
136W (Tc)
FET typ
N-Channel
FET-funktioner
-
Dränera till spänningskälla (Vdss)
120V
Ström - Kontinuerlig dränering (Id) @ 25°C
75A (Tc)
Aktiva Rds (Max) @ Id, Vgs
11 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 83µA
Portkostnad (Qg) (Max) @ Vgs
65nC @ 10V
Ingångskapacitans (Ciss) (Max) @ Vds
4310pF @ 60V
Drivspänning (Max Active Rds, Min Active Rds)
10V
Vgs (max)
±20V
Begäran om begäran
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