GeneSiC Semiconductor
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KBU6M
Datablad

KBU6M

DIODE BRIDGE 1000V 6A KBU
Artikelnummer
KBU6M
Tillverkare/varumärke
GeneSiC Semiconductor
Serier
-
Sektionsstatus
Active
Förpackning
Bulk
Teknologi
Standard
Driftstemperatur
-55°C ~ 150°C (TJ)
Monteringstyp
Through Hole
Paket/fodral
4-SIP, KBU
Leverantörsenhetspaket
KBU
Diodtyp
Single Phase
Spänning - inverterad topp (max)
1kV
Aktuell - Genomsnitt korrigerad (Io)
6A
Spänning - Framåt (Vf) (Max) @ If
1V @ 6A
Ström - Omvänd läckage @ Vr
10µA @ 1000V
Begäran om begäran
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I lager 33563 PCS
Kontaktinformation
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