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NCP5109BDR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High and Low Side, 200 V

NCP5109BDR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High and Low Side, 200 V
Artikelnummer
NCP5109BDR2G
Kategori
Power Chip > Gate Driver IC
Tillverkare/varumärke
onsemi (Ansemi)
Inkapsling
SOIC-8
Förpackning
taping
Antal paket
2500
Beskrivning
The NCP5109 is a high voltage gate driver integrated circuit providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in half bridge configuration version B or any other high side + low side configuration version A. It uses a bootstrap technique to ensure proper driving of the high side power switch. The driver uses 2 independent inputs. NCP5109 = 200V, NCP5106 = 600V
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Nyckelord av NCP5109BDR2G
NCP5109BDR2G Elektroniska komponenter
NCP5109BDR2G Försäljning
NCP5109BDR2G Leverantör
NCP5109BDR2G Distributör
NCP5109BDR2G Datatabell
NCP5109BDR2G Foton
NCP5109BDR2G Pris
NCP5109BDR2G Erbjudande
NCP5109BDR2G Lägsta pris
NCP5109BDR2G Sök
NCP5109BDR2G Köp av
NCP5109BDR2G Chip