W25N01GVZEIT TR

Product Overview

• Category: Non-volatile Memory
• Use: Data storage in electronic devices
• Characteristics: High capacity, fast read/write speeds, low power consumption
• Package: Surface mount package
• Essence: Flash memory chip
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Capacity: 1 Gigabit (128 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Voltage Range: 2.7V to 3.6V
• Operating Temperature: -40°C to +85°C
• Erase/Program Cycles: 100,000 cycles
• Data Retention: Up to 20 years

Detailed Pin Configuration

The W25N01GVZEIT TR has the following pin configuration:

1. VCC - Power supply voltage
2. GND - Ground
3. HOLD - Suspends a serial sequence temporarily
4. WP - Write Protect, protects the memory array from being programmed or erased
5. SIO0 - Serial data input/output
6. SIO1 - Serial data output
7. SIO2 - Additional serial data input/output
8. SIO3 - Additional serial data output
9. CS - Chip Select, enables communication with the device
10. CLK - Serial clock input

Functional Features

• High-speed data transfer with SPI interface
• Efficient block erase and program operations
• Flexible write protection options
• Low power consumption during standby and active modes
• Reliable data retention even in harsh environmental conditions

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast read/write speeds - Low power consumption - Compact package size - Wide operating temperature range

Disadvantages: - Limited erase/program cycles - Relatively higher cost compared to other memory technologies

Working Principles

The W25N01GVZEIT TR is based on NAND flash memory technology. It stores data in a series of memory cells organized into blocks. The memory cells are made up of floating-gate transistors that can store electrical charges. To write data, the memory cells are programmed by trapping charges in the floating gates. Reading data involves detecting the presence or absence of charges in the memory cells.

Detailed Application Field Plans

The W25N01GVZEIT TR is widely used in various electronic devices that require non-volatile data storage. Some common application fields include:

1. Consumer Electronics: Smartphones, tablets, digital cameras
2. Automotive: Infotainment systems, navigation systems
3. Industrial: Internet of Things (IoT) devices, industrial automation
4. Medical: Patient monitoring devices, medical imaging equipment
5. Networking: Routers, switches, network storage devices

Detailed and Complete Alternative Models

1. W25N02GVZEIT TR - 2 Gigabit (256 Megabytes) capacity
2. W25N04GVZEIT TR - 4 Gigabit (512 Megabytes) capacity
3. W25N08GVZEIT TR - 8 Gigabit (1 Gigabyte) capacity
4. W25N16GVZEIT TR - 16 Gigabit (2 Gigabytes) capacity

These alternative models offer higher capacities for applications that require more storage space.

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