The PHE13009/DG,127 belongs to the category of power transistors.
The PHE13009/DG,127 has the following specifications: - Maximum Collector-Emitter Voltage: 700V - Maximum Collector Current: 12A - Power Dissipation: 80W - Transition Frequency: 4MHz
The transistor has three pins: the emitter, base, and collector. The pin configuration is as follows: - Emitter (E): Pin 1 - Base (B): Pin 2 - Collector (C): Pin 3
Advantages: - Suitable for high-power applications - Low saturation voltage reduces power loss - Fast switching speed allows for efficient operation
Disadvantages: - May require heat sinking due to high power dissipation - Higher cost compared to low-power transistors
The PHE13009/DG,127 operates based on the principles of bipolar junction transistors, where the flow of current between the collector and emitter is controlled by the base current.
The PHE13009/DG,127 is commonly used in the following applications: - Power supplies - Audio amplifiers - Motor control circuits - Inverters and converters
Some alternative models to the PHE13009/DG,127 include: - MJL1302A - MJE13009
This completes the entry for the PHE13009/DG,127, providing comprehensive information about its category, use, characteristics, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
What is PHE13009/DG,127?
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In what technical solutions is PHE13009/DG,127 commonly used?
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What are the typical operating conditions for PHE13009/DG,127?
How does PHE13009/DG,127 compare to other power transistors in the market?
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Can PHE13009/DG,127 be used in automotive applications?
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