BT149D,126

Product Overview

• Category: Semiconductor
• Use: Power transistor
• Characteristics: High voltage, high speed switching
• Package: TO-220AB
• Essence: NPN silicon epitaxial planar type
• Packaging/Quantity: Bulk packaging, quantity varies

Specifications

• Voltage - Collector Emitter Breakdown (Max): 80V
• Current - Collector (Ic) (Max): 2A
• Power - Max: 25W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
• Frequency - Transition: 30MHz

Detailed Pin Configuration

• Pin 1: Emitter
• Pin 2: Base
• Pin 3: Collector

Functional Features

• High voltage capability
• Fast switching speed
• Low collector-emitter saturation voltage

Advantages

• Suitable for high voltage applications
• Fast switching performance
• Low power dissipation

Disadvantages

• Limited current and power handling capacity
• Sensitive to overvoltage spikes

Working Principles

The BT149D,126 is designed to amplify and switch electronic signals and power. It operates by controlling the flow of current between the collector and emitter terminals based on the base current.

Detailed Application Field Plans

• Switching power supplies
• Electronic ballasts
• Compact fluorescent lamps
• LED drivers

Detailed and Complete Alternative Models

• BD135, BD139, BD140
• 2N3055, TIP31C, TIP32C

This comprehensive entry provides a detailed overview of the BT149D,126 semiconductor power transistor, including its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.