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SISS04DN-T1-GE3

SISS04DN-T1-GE3

Product Overview

Category

The SISS04DN-T1-GE3 belongs to the category of semiconductor devices, specifically a Schottky Barrier Diode.

Use

It is commonly used in electronic circuits for rectification and voltage clamping applications.

Characteristics

  • Low forward voltage drop
  • High switching speed
  • Low reverse leakage current

Package

The SISS04DN-T1-GE3 is typically available in a surface-mount package, such as the SOD-123FL.

Essence

This diode serves as an essential component in power supply and signal processing circuits.

Packaging/Quantity

It is usually supplied in reels or tape and reel packaging, with quantities varying based on manufacturer specifications.

Specifications

  • Forward Voltage: 0.35V (typical) at 1A
  • Reverse Voltage: 40V
  • Forward Current: 1A
  • Reverse Recovery Time: 15ns (typical)

Detailed Pin Configuration

The SISS04DN-T1-GE3 typically has two pins, with the cathode marked by a line on the body of the diode.

Functional Features

  • Fast switching speed allows for efficient circuit operation.
  • Low forward voltage drop minimizes power loss.
  • High reverse voltage capability ensures reliable performance in various applications.

Advantages and Disadvantages

Advantages

  • Efficient power conversion
  • Compact size
  • Reliable performance in high-frequency circuits

Disadvantages

  • Limited reverse voltage compared to other diode types
  • Sensitivity to temperature variations

Working Principles

The SISS04DN-T1-GE3 operates based on the Schottky barrier principle, where the metal-semiconductor junction provides low forward voltage drop and fast switching characteristics.

Detailed Application Field Plans

Power Supply Circuits

The diode can be used in AC to DC converters and voltage regulation circuits due to its low forward voltage drop and fast response time.

Signal Processing

In signal processing circuits, the diode aids in rectifying and clamping signals, ensuring accurate data transmission and reception.

Automotive Electronics

Due to its compact size and efficiency, the diode finds applications in automotive electronics for various functions such as voltage regulation and protection.

Detailed and Complete Alternative Models

  • 1N5819
  • SS14
  • BAT54S

In conclusion, the SISS04DN-T1-GE3 Schottky Barrier Diode offers efficient and reliable performance in various electronic circuits, making it a valuable component in modern electronic systems.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av SISS04DN-T1-GE3 i tekniska lösningar

  1. What is the maximum voltage rating of SISS04DN-T1-GE3?

    • The maximum voltage rating of SISS04DN-T1-GE3 is 20V.
  2. What is the typical on-state resistance of SISS04DN-T1-GE3?

    • The typical on-state resistance of SISS04DN-T1-GE3 is 22mΩ.
  3. Can SISS04DN-T1-GE3 be used in automotive applications?

    • Yes, SISS04DN-T1-GE3 is suitable for automotive applications.
  4. What is the maximum continuous drain current of SISS04DN-T1-GE3?

    • The maximum continuous drain current of SISS04DN-T1-GE3 is 100A.
  5. Does SISS04DN-T1-GE3 have overcurrent protection?

    • Yes, SISS04DN-T1-GE3 features overcurrent protection.
  6. What is the operating temperature range of SISS04DN-T1-GE3?

    • The operating temperature range of SISS04DN-T1-GE3 is -55°C to 150°C.
  7. Is SISS04DN-T1-GE3 RoHS compliant?

    • Yes, SISS04DN-T1-GE3 is RoHS compliant.
  8. What is the gate threshold voltage of SISS04DN-T1-GE3?

    • The gate threshold voltage of SISS04DN-T1-GE3 is typically 1.5V.
  9. Can SISS04DN-T1-GE3 be used in power management applications?

    • Yes, SISS04DN-T1-GE3 is suitable for power management applications.
  10. Does SISS04DN-T1-GE3 require an external diode for freewheeling protection?

    • No, SISS04DN-T1-GE3 has built-in freewheeling diode protection.