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SIR820DP-T1-GE3

SIR820DP-T1-GE3

Introduction

The SIR820DP-T1-GE3 is a power MOSFET belonging to the category of semiconductor devices. It is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Power MOSFET
  • Use: Power switching applications
  • Characteristics: High efficiency, low on-resistance, fast switching speed
  • Package: DPAK (TO-252)
  • Essence: Efficient power management
  • Packaging/Quantity: Available in reels with varying quantities

Specifications

The SIR820DP-T1-GE3 features the following specifications: - Voltage Rating: 30V - Current Rating: 100A - On-Resistance: 1.5mΩ - Gate Charge: 20nC - Operating Temperature Range: -55°C to 175°C - Package Type: DPAK (TO-252)

Detailed Pin Configuration

The SIR820DP-T1-GE3 has a standard DPAK (TO-252) package with three pins: 1. Gate (G): Input for controlling the switching operation 2. Drain (D): Output terminal for the load 3. Source (S): Common reference terminal

Functional Features

  • High Efficiency: The MOSFET offers low on-resistance, resulting in minimal power loss during operation.
  • Fast Switching Speed: Enables rapid switching between on and off states, suitable for high-frequency applications.
  • Low Thermal Resistance: Efficient heat dissipation for improved reliability.

Advantages and Disadvantages

Advantages

  • High efficiency and low on-resistance
  • Fast switching speed
  • Compact DPAK package for space-constrained designs

Disadvantages

  • Limited voltage and current ratings compared to higher-power MOSFETs
  • Sensitivity to static discharge requires careful handling during assembly

Working Principles

The SIR820DP-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of the gate voltage to modulate the flow of current between the drain and source terminals. When the gate voltage is applied, the MOSFET switches on, allowing current to flow through the device. Conversely, removing the gate voltage turns the MOSFET off, interrupting the current flow.

Detailed Application Field Plans

The SIR820DP-T1-GE3 finds extensive use in various applications, including: - DC-DC Converters: Efficiently manage power conversion in portable electronic devices. - Motor Control: Enable precise control of motor speed and direction in industrial and automotive systems. - Power Supplies: Facilitate efficient power management in server farms and telecommunications equipment.

Detailed and Complete Alternative Models

Several alternative models to the SIR820DP-T1-GE3 include: - SiR880DP-T1-GE3: Higher voltage rating for elevated power applications - SiR840DP-T1-GE3: Lower on-resistance for enhanced efficiency in specific designs - SiR830DP-T1-GE3: Moderate voltage and current ratings suitable for general-purpose applications

In conclusion, the SIR820DP-T1-GE3 power MOSFET offers high efficiency, fast switching speed, and compact packaging, making it an ideal choice for various power switching applications across different industries.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av SIR820DP-T1-GE3 i tekniska lösningar

  1. What is the maximum voltage rating for SIR820DP-T1-GE3?

    • The maximum voltage rating for SIR820DP-T1-GE3 is 30V.
  2. What is the typical on-state resistance of SIR820DP-T1-GE3?

    • The typical on-state resistance of SIR820DP-T1-GE3 is 4.5 mΩ.
  3. Can SIR820DP-T1-GE3 be used in automotive applications?

    • Yes, SIR820DP-T1-GE3 is suitable for automotive applications.
  4. What is the recommended operating temperature range for SIR820DP-T1-GE3?

    • The recommended operating temperature range for SIR820DP-T1-GE3 is -55°C to 150°C.
  5. Does SIR820DP-T1-GE3 have overcurrent protection?

    • Yes, SIR820DP-T1-GE3 features overcurrent protection.
  6. Is SIR820DP-T1-GE3 RoHS compliant?

    • Yes, SIR820DP-T1-GE3 is RoHS compliant.
  7. What is the package type for SIR820DP-T1-GE3?

    • SIR820DP-T1-GE3 comes in a PowerPAK® SO-8 package.
  8. Can SIR820DP-T1-GE3 be used in high-frequency switching applications?

    • Yes, SIR820DP-T1-GE3 is suitable for high-frequency switching applications.
  9. What is the gate charge of SIR820DP-T1-GE3?

    • The gate charge of SIR820DP-T1-GE3 is typically 17nC.
  10. Does SIR820DP-T1-GE3 have built-in thermal shutdown protection?

    • Yes, SIR820DP-T1-GE3 includes built-in thermal shutdown protection.