SIHH24N65E-T1-GE3

Product Overview

SIHH24N65E-T1-GE3 belongs to the category of power MOSFETs. It is commonly used in electronic circuits for switching and amplification purposes. The characteristics of this product include high voltage capability, low on-resistance, and fast switching speed. It is typically packaged in a TO-220AB package and is available in quantities suitable for both individual and industrial use.

Specifications

• Voltage Rating: 650V
• Current Rating: 24A
• Package Type: TO-220AB
• On-Resistance: 0.19Ω
• Gate Charge: 38nC
• Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

The SIHH24N65E-T1-GE3 has three pins: 1. Source (S) 2. Drain (D) 3. Gate (G)

Functional Features

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge

Advantages and Disadvantages

Advantages: - Efficient power management - Suitable for high-frequency applications - Reliable performance

Disadvantages: - Sensitive to static electricity - Requires careful handling during installation

Working Principles

The SIHH24N65E-T1-GE3 operates based on the principles of field-effect transistors. When a voltage is applied to the gate terminal, it creates an electric field that controls the flow of current between the source and drain terminals.

Detailed Application Field Plans

This power MOSFET is commonly used in various applications such as: - Switching power supplies - Motor control - Inverters - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to SIHH24N65E-T1-GE3 include: - SIHH22N60E-T1-GE3 - SIHH26N70E-T1-GE3 - SIHH20N50E-T1-GE3

In conclusion, the SIHH24N65E-T1-GE3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of electronic applications.

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