SIHG80N60EF-GE3
Product Category
The SIHG80N60EF-GE3 belongs to the category of power semiconductor devices.
Basic Information Overview
- Use: The SIHG80N60EF-GE3 is used as a high-voltage, high-speed switching device in various power electronic applications.
- Characteristics: It features low on-state resistance, fast switching speed, and high input impedance.
- Package: The SIHG80N60EF-GE3 is typically available in a TO-247 package.
- Essence: Its essence lies in providing efficient and reliable power switching capabilities.
- Packaging/Quantity: It is commonly packaged individually and sold in quantities suitable for industrial and commercial applications.
Specifications
The specifications of the SIHG80N60EF-GE3 include: - Maximum Voltage: 600V - Continuous Current: 80A - Gate-Source Threshold Voltage: 4V - Total Gate Charge: 160nC - Diode Forward Current: 80A - Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The detailed pin configuration of the SIHG80N60EF-GE3 includes the gate, drain, and source terminals, which are essential for its proper integration into circuit designs.
Functional Features
- High voltage capability
- Fast switching speed
- Low on-state resistance
- Enhanced thermal performance
Advantages and Disadvantages
Advantages: - Efficient power switching - Reduced power losses - Suitable for high-frequency applications - Enhanced reliability
Disadvantages: - Sensitive to overvoltage conditions - Requires careful handling during installation
Working Principles
The SIHG80N60EF-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the flow of current through the device.
Detailed Application Field Plans
The SIHG80N60EF-GE3 finds extensive application in: - Switch-mode power supplies - Motor drives - Inverters - UPS systems - Renewable energy systems
Detailed and Complete Alternative Models
Some alternative models to the SIHG80N60EF-GE3 include: - IRFP4668PbF - FGA60N65SMD - STW75NF60
This comprehensive entry provides an in-depth understanding of the SIHG80N60EF-GE3, covering its category, basic information, specifications, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
Lista 10 Vanliga frågor och svar relaterade till tillämpningen av SIHG80N60EF-GE3 i tekniska lösningar
What is the maximum voltage rating of SIHG80N60EF-GE3?
- The maximum voltage rating of SIHG80N60EF-GE3 is 600V.
What is the maximum continuous drain current of SIHG80N60EF-GE3?
- The maximum continuous drain current of SIHG80N60EF-GE3 is 80A.
What is the on-state resistance of SIHG80N60EF-GE3?
- The on-state resistance of SIHG80N60EF-GE3 is typically 0.08 ohms.
What are the typical applications for SIHG80N60EF-GE3?
- SIHG80N60EF-GE3 is commonly used in applications such as motor drives, inverters, and power supplies.
What is the gate threshold voltage of SIHG80N60EF-GE3?
- The gate threshold voltage of SIHG80N60EF-GE3 is typically 4V.
What is the maximum junction temperature of SIHG80N60EF-GE3?
- The maximum junction temperature of SIHG80N60EF-GE3 is 175°C.
Does SIHG80N60EF-GE3 require a heat sink for operation?
- Yes, SIHG80N60EF-GE3 may require a heat sink for efficient thermal management, especially in high-power applications.
What is the recommended gate drive voltage for SIHG80N60EF-GE3?
- The recommended gate drive voltage for SIHG80N60EF-GE3 is typically 10V.
Is SIHG80N60EF-GE3 suitable for use in automotive applications?
- Yes, SIHG80N60EF-GE3 is suitable for use in automotive applications, provided it meets the specific requirements and standards for automotive electronics.
What are the key advantages of using SIHG80N60EF-GE3 in technical solutions?
- Some key advantages of using SIHG80N60EF-GE3 include its high voltage rating, low on-state resistance, and suitability for high-power applications.