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SIHG47N60E-E3
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SIHG47N60E-E3

Product Overview

Category

The SIHG47N60E-E3 belongs to the category of power MOSFETs.

Use

It is commonly used in power electronics applications such as motor control, power supplies, and inverters.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • High reliability

Package

The SIHG47N60E-E3 is typically available in a TO-247 package.

Essence

This power MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Voltage Rating: 600V
  • Current Rating: 47A
  • On-Resistance: 0.16Ω
  • Gate Charge: 70nC
  • Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

The SIHG47N60E-E3 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low conduction losses
  • High efficiency
  • Enhanced thermal performance
  • Robustness against overcurrent and overvoltage conditions

Advantages

  • Reduced power dissipation
  • Improved system efficiency
  • Enhanced reliability
  • Suitable for high-power applications

Disadvantages

  • Higher cost compared to standard MOSFETs
  • Requires careful handling due to its high voltage rating

Working Principles

The SIHG47N60E-E3 operates based on the principle of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. When the gate voltage is applied, it modulates the conductivity of the MOSFET, allowing for efficient power regulation.

Detailed Application Field Plans

The SIHG47N60E-E3 is widely used in the following applications: - Motor drives - Uninterruptible power supplies (UPS) - Solar inverters - Switched-mode power supplies (SMPS) - Industrial automation systems

Detailed and Complete Alternative Models

Some alternative models to the SIHG47N60E-E3 include: - IRFP4668PbF - FCPF47N60NT - STW47N60M2

In conclusion, the SIHG47N60E-E3 power MOSFET offers high-performance characteristics suitable for demanding power electronics applications. Its efficient operation, high reliability, and wide range of applications make it a valuable component in modern electronic systems.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av SIHG47N60E-E3 i tekniska lösningar

Sure, here are 10 common questions and answers related to the application of SIHG47N60E-E3 in technical solutions:

  1. What is the maximum drain-source voltage rating of SIHG47N60E-E3?

    • The maximum drain-source voltage rating of SIHG47N60E-E3 is 600V.

  2. What is the continuous drain current rating of SIHG47N60E-E3?

    • The continuous drain current rating of SIHG47N60E-E3 is 47A.

  3. What type of package does SIHG47N60E-E3 come in?

    • SIHG47N60E-E3 comes in a TO-247AC package.

  4. What is the on-state resistance of SIHG47N60E-E3?

    • The on-state resistance of SIHG47N60E-E3 is typically 0.19 ohms.

  5. What are the typical applications for SIHG47N60E-E3?

    • SIHG47N60E-E3 is commonly used in applications such as motor control, power supplies, and inverters.

  6. What is the gate threshold voltage of SIHG47N60E-E3?

    • The gate threshold voltage of SIHG47N60E-E3 is typically 2.0V.

  7. What is the maximum junction temperature of SIHG47N60E-E3?

    • The maximum junction temperature of SIHG47N60E-E3 is 150°C.

  8. Does SIHG47N60E-E3 have built-in protection features?

    • Yes, SIHG47N60E-E3 has built-in overcurrent and overtemperature protection.

  9. Can SIHG47N60E-E3 be used in high-frequency switching applications?

    • Yes, SIHG47N60E-E3 is suitable for high-frequency switching due to its low on-state resistance.

  10. Is SIHG47N60E-E3 RoHS compliant?

    • Yes, SIHG47N60E-E3 is RoHS compliant, making it suitable for environmentally friendly designs.