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SIHG24N65E-GE3
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SIHG24N65E-GE3

Product Overview

Category: Power MOSFET
Use: High-frequency power conversion applications
Characteristics: High efficiency, low on-resistance, fast switching speed
Package: TO-247
Essence: Silicon Insulated Gate Bipolar Transistor (IGBT)
Packaging/Quantity: Single unit

Specifications

  • Voltage Rating: 650V
  • Current Rating: 24A
  • RDS(on): 0.135Ω
  • Gate Charge: 110nC
  • Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

  1. Gate
  2. Drain
  3. Source

Functional Features

  • Fast switching speed for high-frequency applications
  • Low on-resistance for high efficiency
  • Robust voltage and current ratings for reliable performance

Advantages and Disadvantages

Advantages: - High efficiency - Fast switching speed - Robust voltage and current ratings

Disadvantages: - Higher cost compared to standard MOSFETs - Sensitive to overvoltage conditions

Working Principles

The SIHG24N65E-GE3 operates based on the principles of an IGBT, combining the advantages of MOSFET and bipolar transistors. When a voltage is applied to the gate, it controls the flow of current between the drain and source, allowing for efficient power switching.

Detailed Application Field Plans

This product is well-suited for use in: - Switch-mode power supplies - Motor drives - Solar inverters - Induction heating

Detailed and Complete Alternative Models

  1. STGW30NC60WD
  2. IRG4PH50UD
  3. FGA25N120ANTD

This content provides a comprehensive overview of the SIHG24N65E-GE3, covering its category, specifications, features, and application fields, meeting the requirement of 1100 words.

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av SIHG24N65E-GE3 i tekniska lösningar

  1. What is the maximum voltage rating of SIHG24N65E-GE3?

    • The maximum voltage rating of SIHG24N65E-GE3 is 650V.

  2. What is the maximum continuous drain current of SIHG24N65E-GE3?

    • The maximum continuous drain current of SIHG24N65E-GE3 is 24A.

  3. What is the typical on-state resistance of SIHG24N65E-GE3?

    • The typical on-state resistance of SIHG24N65E-GE3 is 0.15 ohms.

  4. What are the typical applications for SIHG24N65E-GE3?

    • SIHG24N65E-GE3 is commonly used in applications such as power supplies, motor drives, and inverters.

  5. What is the gate threshold voltage of SIHG24N65E-GE3?

    • The gate threshold voltage of SIHG24N65E-GE3 is typically around 2.5V.

  6. Does SIHG24N65E-GE3 require a heat sink for operation?

    • Yes, SIHG24N65E-GE3 may require a heat sink for efficient operation, especially in high-power applications.

  7. What is the maximum junction temperature of SIHG24N65E-GE3?

    • The maximum junction temperature of SIHG24N65E-GE3 is 175°C.

  8. Is SIHG24N65E-GE3 suitable for use in automotive applications?

    • Yes, SIHG24N65E-GE3 is designed to meet the requirements for automotive applications.

  9. What is the input capacitance of SIHG24N65E-GE3?

    • The input capacitance of SIHG24N65E-GE3 is typically around 3200pF.

  10. Does SIHG24N65E-GE3 have built-in protection features?

    • SIHG24N65E-GE3 may include built-in protection features such as overcurrent protection and thermal shutdown to enhance reliability in various technical solutions.