SIHF15N65E-GE3
Product Category: Power MOSFET
Basic Information Overview: - Category: Semiconductor - Use: Power switching applications - Characteristics: High voltage, high current capability, low on-state resistance - Package: TO-220 Full Pack - Essence: Silicon Insulated Gate Bipolar Transistor (IGBT) - Packaging/Quantity: Tape & Reel (800 units per reel)
Specifications: - Voltage Rating: 650V - Current Rating: 15A - RDS(on): 0.29Ω - Gate Charge: 40nC - Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Collector - Pin 3: Emitter
Functional Features: - High voltage capability - Low gate charge - Fast switching speed - Low thermal resistance
Advantages: - High power efficiency - Reduced conduction losses - Enhanced system reliability - Suitable for high-frequency applications
Disadvantages: - Higher cost compared to traditional MOSFETs - Sensitive to overvoltage conditions
Working Principles: The SIHF15N65E-GE3 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of a channel.
Detailed Application Field Plans: - Switched-mode power supplies - Motor drives - Inverters - Induction heating - Uninterruptible power supplies (UPS)
Detailed and Complete Alternative Models: - Infineon Technologies IGBT Modules - ON Semiconductor IGBTs - STMicroelectronics IGBTs
This comprehensive entry provides an in-depth understanding of the SIHF15N65E-GE3, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
Lista 10 Vanliga frågor och svar relaterade till tillämpningen av SIHF15N65E-GE3 i tekniska lösningar
What is the maximum drain-source voltage of SIHF15N65E-GE3?
- The maximum drain-source voltage of SIHF15N65E-GE3 is 650 volts.
What is the continuous drain current rating of SIHF15N65E-GE3?
- The continuous drain current rating of SIHF15N65E-GE3 is 15 amperes.
What is the on-state resistance (RDS(on)) of SIHF15N65E-GE3?
- The on-state resistance (RDS(on)) of SIHF15N65E-GE3 is typically 0.15 ohms.
Can SIHF15N65E-GE3 be used in high-frequency switching applications?
- Yes, SIHF15N65E-GE3 can be used in high-frequency switching applications due to its low RDS(on) and fast switching characteristics.
Is SIHF15N65E-GE3 suitable for use in power supplies?
- Yes, SIHF15N65E-GE3 is suitable for use in power supplies, especially in applications requiring high efficiency and high power density.
What is the operating temperature range of SIHF15N65E-GE3?
- The operating temperature range of SIHF15N65E-GE3 is typically -55°C to 150°C.
Does SIHF15N65E-GE3 require a heat sink for thermal management?
- Depending on the application and power dissipation, a heat sink may be required for optimal thermal management of SIHF15N65E-GE3.
Can SIHF15N65E-GE3 be used in automotive applications?
- Yes, SIHF15N65E-GE3 is suitable for use in automotive applications, such as electric vehicle power systems and battery management.
What are the typical gate charge and gate-source voltage of SIHF15N65E-GE3?
- The typical gate charge of SIHF15N65E-GE3 is 35nC, and the gate-source voltage is ±20 volts.
Are there any recommended application circuits or reference designs for using SIHF15N65E-GE3?
- Yes, the datasheet for SIHF15N65E-GE3 provides recommended application circuits and reference designs for various technical solutions.