SIHB24N65ET1-GE3

Product Overview

Category

The SIHB24N65ET1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power supply applications, motor control, and other high-power switching applications.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge

Package

The SIHB24N65ET1-GE3 is typically available in a TO-220AB package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

• Drain-Source Voltage (VDS): 650V
• Continuous Drain Current (ID): 24A
• On-Resistance (RDS(on)): 0.19Ω
• Gate-Source Voltage (VGS): ±20V
• Total Gate Charge (Qg): 60nC
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHB24N65ET1-GE3 features a standard TO-220AB pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• High voltage capability allows for use in various power applications.
• Low on-resistance minimizes power loss and improves efficiency.
• Fast switching speed enables rapid control in switching applications.

Advantages

• Suitable for high-power applications
• Efficient power management
• Fast switching speed

Disadvantages

• Higher cost compared to lower-rated MOSFETs
• May require additional heat dissipation measures in high-power applications

Working Principles

The SIHB24N65ET1-GE3 operates based on the principles of field-effect transistors, utilizing its gate-source voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

Power Supply Systems

The MOSFET can be used in power supply systems to efficiently regulate and control the flow of power, ensuring stable and reliable operation.

Motor Control

In motor control applications, the MOSFET can be utilized to manage the power delivery to motors, enabling precise speed and direction control.

High-Power Switching

Its high voltage capability and low on-resistance make it suitable for high-power switching applications, such as inverter systems and industrial equipment.

Detailed and Complete Alternative Models

• IRF840: A comparable MOSFET with similar voltage and current ratings.
• FDP8878: Offers an alternative option with comparable characteristics for specific applications.

In conclusion, the SIHB24N65ET1-GE3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for various power management and control applications. While it has advantages in high-power scenarios, it may come with a higher cost and require additional thermal considerations. Understanding its specifications, pin configuration, functional features, and application plans is crucial for effective utilization in electronic systems. Additionally, alternative models like the IRF840 and FDP8878 provide options for specific application requirements.