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SIHB23N60E-GE3
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SIHB23N60E-GE3

Product Overview

Category

The SIHB23N60E-GE3 belongs to the category of power semiconductor devices.

Use

It is used for power conversion and control in various electronic applications.

Characteristics

  • High voltage and current handling capability
  • Low on-state resistance
  • Fast switching speed
  • Robust and reliable performance

Package

The SIHB23N60E-GE3 is typically available in a TO-220AB package.

Essence

This product is essential for efficient power management and control in electronic systems.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Voltage Rating: 600V
  • Current Rating: 23A
  • On-State Resistance: <0.25Ω
  • Gate Threshold Voltage: 3V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHB23N60E-GE3 features a standard TO-220AB pin configuration: 1. Gate 2. Drain 3. Source

Functional Features

  • High voltage blocking capability
  • Low conduction losses
  • Fast and efficient switching
  • Enhanced thermal performance

Advantages

  • Suitable for high-power applications
  • Low power dissipation
  • Reliable under high-stress conditions
  • Compatible with various driving circuits

Disadvantages

  • Higher cost compared to standard MOSFETs
  • Larger physical footprint
  • Requires careful thermal management in high-power designs

Working Principles

The SIHB23N60E-GE3 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

This device is widely used in: - Switch-mode power supplies - Motor control systems - Renewable energy inverters - Industrial automation equipment - Electric vehicle powertrains

Detailed and Complete Alternative Models

  • IRFB23N60C3
  • STW23N60M2
  • FDPF23N50T

In conclusion, the SIHB23N60E-GE3 is a high-performance power semiconductor device that offers efficient power management and control capabilities for a wide range of electronic applications. Its robust characteristics and functional features make it a preferred choice for demanding power electronics designs.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av SIHB23N60E-GE3 i tekniska lösningar

  1. What is the maximum voltage rating of SIHB23N60E-GE3?

    • The maximum voltage rating of SIHB23N60E-GE3 is 600V.

  2. What is the continuous drain current of SIHB23N60E-GE3?

    • The continuous drain current of SIHB23N60E-GE3 is 23A.

  3. What is the on-state resistance of SIHB23N60E-GE3?

    • The on-state resistance of SIHB23N60E-GE3 is typically 0.19 ohms.

  4. Can SIHB23N60E-GE3 be used in high-frequency applications?

    • Yes, SIHB23N60E-GE3 is suitable for high-frequency applications due to its fast switching characteristics.

  5. What type of package does SIHB23N60E-GE3 come in?

    • SIHB23N60E-GE3 is available in a TO-220 full-pack package.

  6. Is SIHB23N60E-GE3 suitable for use in motor control applications?

    • Yes, SIHB23N60E-GE3 is commonly used in motor control applications due to its high current and voltage ratings.

  7. Does SIHB23N60E-GE3 require a heatsink for proper operation?

    • It is recommended to use a heatsink with SIHB23N60E-GE3 to ensure proper thermal management, especially in high-power applications.

  8. What is the maximum junction temperature of SIHB23N60E-GE3?

    • The maximum junction temperature of SIHB23N60E-GE3 is 150°C.

  9. Can SIHB23N60E-GE3 be used in automotive applications?

    • Yes, SIHB23N60E-GE3 is suitable for automotive applications such as motor control and power distribution.

  10. Are there any specific ESD precautions to consider when handling SIHB23N60E-GE3?

    • It is important to follow standard ESD precautions when handling SIHB23N60E-GE3 to prevent damage to the device during assembly and installation.