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SIHB22N60E-E3
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SIHB22N60E-E3

Product Overview

Category

The SIHB22N60E-E3 belongs to the category of power semiconductor devices.

Use

It is used for high-voltage and high-current applications in various electronic circuits and systems.

Characteristics

  • High voltage and current handling capability
  • Low on-state resistance
  • Fast switching speed
  • Robust and reliable performance

Package

The SIHB22N60E-E3 is typically available in a TO-220AB package.

Essence

This product is essential for efficient power management and control in electronic devices and systems.

Packaging/Quantity

The SIHB22N60E-E3 is commonly packaged in reels or tubes, with varying quantities based on customer requirements.

Specifications

  • Voltage Rating: 600V
  • Current Rating: 22A
  • On-State Resistance: <0.2Ω
  • Switching Speed: <100ns
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHB22N60E-E3 features a standard TO-220AB pin configuration: 1. Gate 2. Drain 3. Source

Functional Features

  • High voltage blocking capability
  • Low conduction losses
  • Fast and efficient switching
  • Suitable for high-power applications

Advantages

  • Excellent power handling capacity
  • Low on-state resistance for reduced power dissipation
  • Fast switching speed for improved efficiency
  • Reliable performance under high-voltage conditions

Disadvantages

  • Higher cost compared to lower-rated devices
  • Requires proper thermal management due to high power dissipation

Working Principles

The SIHB22N60E-E3 operates based on the principles of field-effect transistor (FET) technology, utilizing its ability to control current flow through the manipulation of electric fields within the device structure.

Detailed Application Field Plans

The SIHB22N60E-E3 is widely used in the following application fields: - Switched-mode power supplies - Motor control systems - Inverters and converters - Industrial automation equipment - Renewable energy systems

Detailed and Complete Alternative Models

Some alternative models to the SIHB22N60E-E3 include: - SIHB20N60E-E3 - SIHB25N60E-E3 - SIHB30N60E-E3 - SIHB18N60E-E3

In conclusion, the SIHB22N60E-E3 is a high-performance power semiconductor device with excellent voltage and current handling capabilities, making it suitable for a wide range of high-power electronic applications.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av SIHB22N60E-E3 i tekniska lösningar

  1. What is the maximum voltage rating of SIHB22N60E-E3?

    • The maximum voltage rating of SIHB22N60E-E3 is 600V.

  2. What is the maximum continuous drain current for SIHB22N60E-E3?

    • The maximum continuous drain current for SIHB22N60E-E3 is 22A.

  3. What type of package does SIHB22N60E-E3 come in?

    • SIHB22N60E-E3 comes in a TO-220AB package.

  4. What is the on-state resistance (RDS(on)) of SIHB22N60E-E3?

    • The on-state resistance of SIHB22N60E-E3 is typically 0.19 ohms.

  5. Is SIHB22N60E-E3 suitable for high-frequency switching applications?

    • Yes, SIHB22N60E-E3 is suitable for high-frequency switching applications.

  6. What is the operating temperature range for SIHB22N60E-E3?

    • The operating temperature range for SIHB22N60E-E3 is -55°C to 150°C.

  7. Does SIHB22N60E-E3 have built-in protection features?

    • Yes, SIHB22N60E-E3 has built-in overcurrent and thermal protection features.

  8. Can SIHB22N60E-E3 be used in motor control applications?

    • Yes, SIHB22N60E-E3 can be used in motor control applications.

  9. What gate-source voltage is required to fully enhance SIHB22N60E-E3?

    • A gate-source voltage of 10V is required to fully enhance SIHB22N60E-E3.

  10. Is SIHB22N60E-E3 RoHS compliant?

    • Yes, SIHB22N60E-E3 is RoHS compliant.